The paper introduces a novel device architecture that combines negative capacitance stabilization with multi-gate topological insulator arrays for ultra-low-power cryogenic electronics. It discusses the integration of ferroelectric hafnium-zirconium oxide with gate-field-induced 1T′-MoS2 topological channels, enabling sub-60 mV/decade subthreshold swing operation and leveraging topologically protected surface states.
Key findings
Achieves sub-60 mV/decade subthreshold swing operation.
Utilizes topologically protected surface states of 2D quantum spin Hall insulators.
Enables precise tuning of the NC matching condition across device variability.
Proposed architecture can achieve steep-slope switching and ultra-high transconductance at cryogenic temperatures.
Limitations & open questions
Challenges in stabilizing the NC state across device arrays and managing variability.